Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

sales@angeltondal.com

86-755-89992216

Shenzhen Hengstar Technology Co., Ltd.
HomeProductsIndustrial Smart Module ActsoriesDDR3 UDIMM Memory module yakatarwa

DDR3 UDIMM Memory module yakatarwa

Mutero Wechibharo:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Raira:
1 Piece/Pieces
Kutakura:
Ocean,Air,Express,Land
  • Product Description
Overview
Chigadzirwa Unhu

Muenzaniso Nha.NSO4GU3AB

Kupa Kugona & Kuwedzera Ruzivo

KutakuraOcean,Air,Express,Land

Mutero WechibharoL/C,T/T,D/A

IncotermFOB,EXW,CIF

Kavha & Dhirivhari
Kutengesa Units:
Piece/Pieces

4GB 1600mhz 240-Pin DDR3 Udimm


Yakateverwa Nhoroondo

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Kuraira tafura yeruzivo

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Tsanangudzo
Hengstar isina kubviswa DDR3 SDRAM Dimms (isina-mbiri data data syncchoronous dram NS04B ndeye 512m x 64-bit maviri rank Ddr3-1600 CL11 1.5V SDRAM Iyo SPD yakarongedzwa kuJede Steattle Latency Ddr3-1600 nguva ye 11-11-11 pa 1.5V. Imwe neimwe-pini-pini dimm inoshandisa goridhe yekubata minwe. Iyo SDRAM haina kuitirwa simm inoitirwa kushandiswa seyekukosha ndangariro kana yakaiswa mumasisitimu akadai sePC uye nzvimbo dzekushanda.


Zvimiro
power kugovera: vdd = 1.5V (1.25V kusvika 1.575V)
vddq = 1.5V (1.25V kusvika 1.575V)
800MHZ FCK ye 1600MB / sec / Pin
8 Yakazvimirira yemukati Bank
PRabhigragamable Cals Latency: 11, 10, 9, 8, 7, 6
PRogrammable Advertitive Latency: 0, CL - 2, kana CL - 1 Clock
8-Bit Pre-Fetch
Boburst Kureba:
bi-kutungamira kusiyanisa data dura strobe
Taura (pachako) calibration; Yemukati yekuzvisarudzira kuburikidza neZQ Pin (Rzq: 240 OHM ± 1%)
Žon kufa kubviswa uchishandisa ODT PIN
avarage Refresh Nguva 7.8us yakadzika pane tcase 85 ° C, 3.9us at 85 ° C <tase <95 ° C
asynchronous reset
ADADUKA YAKABUDA DATA-BUDAPT Drive Simba
Fly-ne topology
PCB: kureba 1.18 "(30mm)
Rohs inoenderana uye halogen-yemahara


Key Timing parameter

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Kero tafura

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


PIN tsanangudzo

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Zvinyorwa : Iyo PIN Rondedzero tafura iri pazasi rondedzero yakazara yezvese zvinogoneka mapini kune ese DDR3 modules. Pini yese yakanyorwa may usatsigirwa pane iyi module. Ona mapini ekupa ruzivo ruzivo rwakananga kune iyi module.


Inoshanda Block Diagram

4GB, 512MX64 module (2rank ye x8)

1


2


ONA:
1.The zq bhora pane yega yega DDR3 chikamu chakabatana kune ekunze 240ω ± 1% kurwisa iyo yakasungirirwa pasi. Iyo inoshandiswa kune iyo calibration yeiyo chikamu chekupindirana pane-kufa kubviswa uye kubuda mutyairi wekubuda.



Module zviyero


Front Fort

3

Front Fort

4

Zvinyorwa:
1.Zvirimo zviyero zviri mumamirimita (inches); Max / min kana kujairika (type) kwawakacherechedzwa.
2.Nealance pane zvese zviyero ± 0.15mm kunze kwekunge zvataurwa neimwe nzira.
3.The Dimensional Diagram ndeyekunongedzera chete.

Product Categories : Industrial Smart Module Actsories

Imeyili kune uyu mutengesi
  • *Nyaya:
  • *To:
    Mr. Jummary
  • *Email:
  • *Mharidzo:
    Mharidzo yako inofanirwa kunge iri pakati pevanhu 20-8000
HomeProductsIndustrial Smart Module ActsoriesDDR3 UDIMM Memory module yakatarwa
Tumira Inquiry
*
*

Musha

Product

Phone

Nezvedu

Inquiry

Isu tichaonana newe zvinosemesa

Zadza rumwe ruzivo kuti ugone kuwirirana newe nekukurumidza

Chirevo chekuvanzika: Kuvanzika kwako kwakakosha kwazvo kwatiri

Tumira